RIBER Expands GaN Production With New MBE 49 System Order
RIBER Expands GaN Production Capabilities
RIBER, a prominent player in the field of molecular beam epitaxy (MBE) systems, has successfully secured an order for their cutting-edge MBE 49 GaN system from a European manufacturer. This strategic acquisition is pivotal for the client's objective to bolster the production capacity of advanced gallium nitride (GaN) components, which are increasingly vital for developing the next generation of display technologies that demand high brightness and energy efficiency.
Advancing Semiconductor Technology
The MBE 49 system is designed with specific features tailored for Plasma-Assisted GaN epitaxy, particularly on 200mm Silicon wafers. This advanced technology is not only crucial for the manufacturing of AlGaN and InGaN devices but also integrates seamlessly into existing semiconductor production processes.
Key Features of the MBE 49 System
RIBER's MBE 49 system is engineered for optimal performance, showcasing several distinct advantages. Among these are its lower growth temperatures suitable for high-indium-content InGaN, precise control over nanowire formation, and minimal residual doping, which significantly enhances semiconductor material quality. Furthermore, the system's capabilities in p-type doping are critical for pushing the performance boundaries of various electronic applications.
Automation and Control
This state-of-the-art system comes with comprehensive automation and is powered by RIBER's advanced Crystal XE process control software, allowing for real-time monitoring and adjustments. With integrated in-situ instrumentation, the MBE 49 ensures high-quality epitaxial growth, an essential factor in maintaining the stringent quality standards demanded by modern semiconductor manufacturing.
Strengthening European Semiconductor Industry
The recent order highlights the collaborative spirit within Europe’s semiconductor industry, affirming its status as a key hub for micro and nanoelectronics innovation. The impending delivery of this system, set for 2025, signals a commitment to elevating manufacturing capabilities and keeping pace with global technological advancements.
About RIBER
Founded in the early 1960s, RIBER has consistently led the market in MBE equipment production. The company's focus lies not only in the design and manufacturing of highly specialized equipment but also in offering crucial scientific and technical support to ensure optimized performance for their clients. RIBER’s expertise spans a wide range of applications, from telecommunications to cutting-edge fields such as quantum computing, making it an essential partner in the evolution of electronic systems.
RIBER is recognized as an innovative company by BPI France and is publicly traded on the Euronext Growth Paris market under the ticker symbol Paris:RIB. This listing further facilitates RIBER's ability to innovate and expand its technological reach.
Contact Information
RIBER: Annie Geoffroy | Tel: +33 (0)1 39 96 65 00 | [email protected]
CALYPTUS: Cyril Combe | Tel: +33 (0)1 53 65 68 68 | [email protected]
Frequently Asked Questions
What is the MBE 49 GaN system?
The MBE 49 GaN system is an advanced equipment designed for the production of gallium nitride components using molecular beam epitaxy technology.
Why is GaN important for displays?
Gallium nitride is crucial for developing high-brightness, low-energy displays due to its superior electronic properties.
When will the MBE 49 system be delivered?
The delivery of the MBE 49 GaN system is scheduled for 2025.
What advantages does RIBER's MBE technology offer?
RIBER's MBE technology offers lower growth temperatures, precise control, minimal residual doping, and enhanced doping capabilities.
How does RIBER support its clients?
RIBER provides scientific and technical support, including maintenance and performance optimization for its MBE equipment.
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