(Total Views: 292)
Posted On: 02/27/2017 8:57:21 AM
Post# of 22465
Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2
Rui Wang, ZhongXue Huang, Shuang Yu, G.Q. Zhao, Zheng Deng, Changqing Jin, Quanjie Jia, Yu Chen, TieYing Yang, Xiaoming Jiang, Lixin Cao
(Submitted on 24 Feb 2017)
Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.
https://arxiv.org/abs/1702.07506
Rui Wang, ZhongXue Huang, Shuang Yu, G.Q. Zhao, Zheng Deng, Changqing Jin, Quanjie Jia, Yu Chen, TieYing Yang, Xiaoming Jiang, Lixin Cao
(Submitted on 24 Feb 2017)
Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.
https://arxiv.org/abs/1702.07506
(0)
(0)
