NoMIS Power Achieves Breakthrough in SiC Technology
NoMIS Power, a pioneer in advanced silicon carbide (SiC) power semiconductor technology, has made substantial progress in enhancing the short-circuit withstand time (SCWT) of SiC MOSFETs. This recent development addresses crucial limitations hindering the broader application of SiC technology within high-power domains, greatly benefiting various industrial sectors.
Understanding the Significance of SCWT
Silicon carbide devices are becoming increasingly popular in power electronics due to their remarkable efficiency, rapid switching capabilities, and outstanding thermal performance. However, their historically lower robustness in short-circuit situations compared to silicon-based IGBTs has created barriers for their integration into high-voltage and high-reliability applications like industrial drives and electric vehicles. The recent advancements from NoMIS Power have expanded the SCWT of SiC MOSFETs to a remarkable minimum of 5 µs, significantly exceeding the usual industry standard of 2-3 µs without negatively affecting the specific on-resistance (Ron,sp).
The Performance Enhancements
This enhancement represents a substantial boost in reliability and opens up new opportunities for system designers who are eager to optimize performance while ensuring fault tolerance. By adjusting the balance between Ron,sp and SCWT through specialized fabrication designs and processes, NoMIS Power has realized impressive performance metrics, yielding results visible in comparative analyses.
Expert Insights on Development
Woongje Sung, CTO at NoMIS Power, highlighted the company's commitment to device architecture engineering, which facilitated significant improvements in SiC short-circuit withstand time. According to Sung, this achievement empowers engineers in the power electronics community to confidently implement SiC solutions in applications where durability is essential.
Performance Testing and Initial Results
NoMIS Power's devices with extended SCWT have undergone rigorous screening to identify latent defects, and they support superior gate driver desaturation designs for high di/dt and dv/dt, allowing switching frequencies to reach hundreds of kHz. Preliminary testing has evidenced a 2X to 4X increase in short-circuit withstand time compared to existing SiC devices, establishing NoMIS Power as a leader in the next generation of power semiconductors.
Broader Industry Impact
This innovation holds significant implications across multiple sectors, including renewable energy, electric transportation, and heavy-duty industrial applications. A longer short-circuit withstand time guarantees dependable performance in vital environments, bolstering the resilience of SiC-based power systems. For instance, redundancy built into the SiC MOSFETs within power converters can lower both costs and power density, all while enhancing system safety.
Enhanced Utilization of SiC MOSFETs
Applications that are sensitive to electromagnetic interference will now be more capable of leveraging SiC MOSFETs, ensuring effective operation without heavy reliance on digital control mechanisms that detect and react to short-circuit events. As the adoption of SiC technology accelerates, the breakthroughs achieved by NoMIS Power will be integral in solidifying the reliability and safety of SiC-based power converters and systems.
Future Outlook and Exhibitions
NoMIS Power plans to showcase this groundbreaking technology at an upcoming conference in Atlanta, marking a significant event for stakeholders in the power electronics sector. Attendees will witness first-hand the innovations that NoMIS Power is presenting, alongside its expanded offerings of SiC discretes and power modules, illuminating the path for the next generation of power semiconductor technologies.
About NoMIS Power
NoMIS Power Corporation focuses on designing and developing cutting-edge Silicon Carbide (SiC) power semiconductor devices and packaging solutions in the U.S. Established to meet the demands of the global power electronics market, NoMIS Power is a spinout from the University at Albany's College of Nanotechnology, Science, and Engineering.
Media Contact Information
For inquiries related to this breakthrough, please reach out to the media contact provided below:
Adam Morgan
518-944-3910
Frequently Asked Questions
What is the significance of SCWT in SiC devices?
The short-circuit withstand time (SCWT) is critical as it defines how well a semiconductor can handle short-circuit conditions, impacting the reliability of power electronics applications.
How has NoMIS Power improved SCWT for SiC MOSFETs?
NoMIS Power has extended the SCWT of its MOSFETs to a minimum of 5 µs, surpassing typical industry standards while maintaining performance.
What industries can benefit from this advancement?
Key industries include renewable energy, electric vehicles, and high-power industrial applications that require resilient and reliable power systems.
What future technologies will NoMIS Power showcase?
NoMIS Power will highlight its latest SiC discretes and power modules at key industry events to demonstrate their advancements.
What is the background of NoMIS Power Corporation?
NoMIS Power is a U.S.-based company that specializes in innovative SiC semiconductors, formed as a spinout from the University at Albany.
