Biography: Dr. Geoff Taylor: Dr. Taylor possess

Biography: Dr. Geoff Taylor:

Dr. Taylor possesses an extraordinary technical background made-up of thirty years of design and development experience in electronic and optical device physics, circuit design, opto-electronics technology, materials and applications. Dr. Taylor has published more than 140 papers related to these areas in the world's most respected journals.

Dr. Taylor is currently a Professor of Electrical Engineering and Photonics at the University of Connecticut and is responsible for their gallium arsenide growth and fabrication facility. At the University, Dr. Taylor has trained 14 doctoral students specializing in GaAs device physics who are now employed by world-class firms such as Motorola, JPL and Hughes Research. Dr. Taylor is widely regarded as the world's leading authority on gallium arsenide solid-state physics as well as the pioneer in the development of monolithic integrated circuits for opto-electronics for which he holds an abundance of device inventions. He is also widely regarded as one of the world's leading experts in III-V opto technology. Prior to his current role, Dr. Taylor served as a Distinguished Member of the technical staff at AT&T Bell Labs (in both Holmdel and Murray Hill, New Jersey) developing inversion channel device technology for III-V materials. While working with Honeywell and Texas Instruments he helped to develop the CCD technology for the Jupiter Orbital Probe as well as the development of NMOS circuits and devices for VLSI chips.

Dr. Taylor holds a Ph.D. in Electrical Engineering and an M.Sc. in Electrical Engineering from the University of Toronto and a B.Sc. in Electrical Engineering from Queens University . Dr. Taylor is a member of OSA, SPIE, LEOS and an IEEE Fellow.

Dr. Geoff Taylor, 
Chief Scientist