$GTCH When it comes to these types of microchips,

$GTCH When it comes to these types of microchips, silicon area is crucial and every micron is important. The new approach will enable the manufacturing of much larger chips within affordable areas. A three-dimensional integrated circuit is a metal-oxide semiconductor (MOS) integrated circuit, manufactured by stacking silicon dies and electrically interconnecting them vertically. GBT's invention goes beyond 3D concept with multi-plane silicon structures, for example honeycomb, hexagonal and further multi-planetary structures, with the goal of increasing silicon surface area. The patent covers silicon interconnection not only vertically but in a multi planar way which opens an entire world of possibilities maximizing silicon area. Manufacturing these types of structures will enable the design of chips with multi-trillion transistors on die, creating new horizons for our entire electronics world. Few examples of areas that will be significantly enhanced are flash memories, GPUs, CPUs, displays, micro-solar cells panels, RF, and MEMS.