Superconductivity and charge carrier localization
Post# of 22467
(Total Views: 964)
Posted On: 05/21/2017 6:06:26 PM
Superconductivity and charge carrier localization in ultrathin
La1.85Sr0.15CuO4/La2CuO4 bilayers
K. Sen, P. Marsik, S. Das, E. Perret, R. de Andres Prada, A. Alberca, N. Biskup, M. Varela, C. Bernhard
(Submitted on 18 May 2017)
L
a
1.85
S
r
0.15
Cu
O
4
/
L
a
2
Cu
O
4
(LSCO15/LCO) bilayers with a precisely controlled thickness of N unit cells (UCs) of the former and M UCs of the latter ([LSCO15\_N/LCO\_M]) were grown on (001)-oriented {\slao} (SLAO) substrates with pulsed laser deposition (PLD). X-ray diffraction and reciprocal space map (RSM) studies confirmed the epitaxial growth of the bilayers and showed that a [LSCO15\_2/LCO\_2] bilayer is fully strained, whereas a [LSCO15\_2/LCO\_7] bilayer is already partially relaxed. The \textit{in situ} monitoring of the growth with reflection high energy electron diffraction (RHEED) revealed that the gas environment during deposition has a surprisingly strong effect on the growth mode and thus on the amount of disorder in the first UC of LSCO15 (or the first two monolayers of LSCO15 containing one
Cu
O
2
plane each). For samples grown in pure
N
2
O
gas (growth type-
, the first LSCO15 UC next to the SLAO substrate is strongly disordered. This disorder is strongly reduced if the growth is performed in a mixture of
N
2
O
and
O
2
gas (growth type-A). Electric transport measurements confirmed that the first UC of LSCO15 next to the SLAO substrate is highly resistive and shows no sign of superconductivity for growth type-B, whereas it is superconducting for growth type-A. Furthermore, we found, rather surprisingly, that the conductivity of the LSCO15 UC next to the LCO capping layer strongly depends on the thickness of the latter. A LCO capping layer with 7~UCs leads to a strong localization of the charge carriers in the adjacent LSCO15 UC and suppresses superconductivity. The magneto-transport data suggest a similarity with the case of weakly hole doped LSCO single crystals that are in a so-called {"{cluster-spin-glass state}"}
https://arxiv.org/abs/1705.06587
La1.85Sr0.15CuO4/La2CuO4 bilayers
K. Sen, P. Marsik, S. Das, E. Perret, R. de Andres Prada, A. Alberca, N. Biskup, M. Varela, C. Bernhard
(Submitted on 18 May 2017)
L
a
1.85
S
r
0.15
Cu
O
4
/
L
a
2
Cu
O
4
(LSCO15/LCO) bilayers with a precisely controlled thickness of N unit cells (UCs) of the former and M UCs of the latter ([LSCO15\_N/LCO\_M]) were grown on (001)-oriented {\slao} (SLAO) substrates with pulsed laser deposition (PLD). X-ray diffraction and reciprocal space map (RSM) studies confirmed the epitaxial growth of the bilayers and showed that a [LSCO15\_2/LCO\_2] bilayer is fully strained, whereas a [LSCO15\_2/LCO\_7] bilayer is already partially relaxed. The \textit{in situ} monitoring of the growth with reflection high energy electron diffraction (RHEED) revealed that the gas environment during deposition has a surprisingly strong effect on the growth mode and thus on the amount of disorder in the first UC of LSCO15 (or the first two monolayers of LSCO15 containing one
Cu
O
2
plane each). For samples grown in pure
N
2
O
gas (growth type-
, the first LSCO15 UC next to the SLAO substrate is strongly disordered. This disorder is strongly reduced if the growth is performed in a mixture of N
2
O
and
O
2
gas (growth type-A). Electric transport measurements confirmed that the first UC of LSCO15 next to the SLAO substrate is highly resistive and shows no sign of superconductivity for growth type-B, whereas it is superconducting for growth type-A. Furthermore, we found, rather surprisingly, that the conductivity of the LSCO15 UC next to the LCO capping layer strongly depends on the thickness of the latter. A LCO capping layer with 7~UCs leads to a strong localization of the charge carriers in the adjacent LSCO15 UC and suppresses superconductivity. The magneto-transport data suggest a similarity with the case of weakly hole doped LSCO single crystals that are in a so-called {"{cluster-spin-glass state}"}
https://arxiv.org/abs/1705.06587
(0)
(0)