Chalcogenide Perovskites- an Emerging Class of Ion
Post# of 22465
Posted On: 10/18/2016 1:51:04 PM
Chalcogenide Perovskites- an Emerging Class of Ionic Semiconductors
Samanthe Pereraa, Haolei Huia, Chuan Zhao, Hongtao Xue, Fan Sun, Chenhua Deng, Nelson Gross, Chris Milleville, Xiaohong Xu, David F. Watson, Bernard Weinstein, Yi-Yang Sun, Shengbai Zhang, Hao Zeng
(Submitted on 16 Oct 2016)
We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.
https://arxiv.org/abs/1610.04882
https://arxiv.org/abs/1610.04882
Samanthe Pereraa, Haolei Huia, Chuan Zhao, Hongtao Xue, Fan Sun, Chenhua Deng, Nelson Gross, Chris Milleville, Xiaohong Xu, David F. Watson, Bernard Weinstein, Yi-Yang Sun, Shengbai Zhang, Hao Zeng
(Submitted on 16 Oct 2016)
We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.
https://arxiv.org/abs/1610.04882
https://arxiv.org/abs/1610.04882
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