Self-Directed Channel Memristor for High Temperatu
Post# of 22456
Posted On: 08/19/2016 12:14:30 PM
Self-Directed Channel Memristor for High Temperature Operation
Kristy A. Campbell
(Submitted on 18 Aug 2016)
Ion-conducting memristors comprised of the layered chalcogenide materials Ge2Se3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can be classified as a generic memristor and can tolerate continuous high temperature operation (at least 150 {\deg}C). Unlike other chalcogenide-based ion conducting device types, the SDC does not require complicated fabrication steps, such as photodoping or thermal annealing, making these devices faster and more reliable to fabricate . Device pulsed response shows fast state switching in the 10E-9 s range. Device cycling at both room temperature and 140 {\deg}C show cycling lifetimes of at least 1 billion.
http://arxiv.org/abs/1608.05357
Kristy A. Campbell
(Submitted on 18 Aug 2016)
Ion-conducting memristors comprised of the layered chalcogenide materials Ge2Se3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can be classified as a generic memristor and can tolerate continuous high temperature operation (at least 150 {\deg}C). Unlike other chalcogenide-based ion conducting device types, the SDC does not require complicated fabrication steps, such as photodoping or thermal annealing, making these devices faster and more reliable to fabricate . Device pulsed response shows fast state switching in the 10E-9 s range. Device cycling at both room temperature and 140 {\deg}C show cycling lifetimes of at least 1 billion.
http://arxiv.org/abs/1608.05357
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