Latest International Rectifier Corp (IRF) Headline
Post# of 14
Posted On: 03/14/2014 4:15:25 PM
Latest International Rectifier Corp (IRF) Headlines
IR's Robust 100V FastIRFET(TM) PQFN 5x6 Power MOSFET Delivers Benchmark Performance for Telecom Power Supply Applications
Business Wire - Thu Mar 06, 8:01AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today announced the introduction of the IRFH7185TRPbF 100V FastIRFET(TM) power MOSFET that delivers benchmark performance for DC-DC power supplies used in telecom applications.
IR to Showcase Latest Energy Saving Power Management Solutions at Electronica China 2014
Business Wire - Tue Mar 04, 8:00AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today announced it will showcase the company's industry-leading energy efficient power management solutions at Electronica China 2014, March 18-20, 2014, Shanghai New International Expo Center (SNIEC), Shanghai.
IR Introduces a Rugged, Reliable Ultra-fast 1400V IGBT Optimized for Induction Heating and Soft Switching Applications
Business Wire - Thu Feb 27, 8:00AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today introduced a rugged, reliable ultra-fast 1400V Trench Insulated Gate Bipolar Transistor (IGBT) optimized for soft switching applications including induction cooktops and microwave ovens.
GaN Semiconductor Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019
M2 - Thu Feb 27, 4:22AM CST
Research and Markets (http://www.researchandmarkets.com/research/bdj8cx/gan_semiconductor) has announced the addition of the "GaN Semiconductor Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019" report to their offering. 'GaN Semiconductor Devices (Power semiconductors, Opto semiconductors) Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019' Gallium Nitride (GaN) is a hard material that contains various chemical properties due to which it finds its suitability for manufacturing of semiconductor devices. Currently GaN semiconductor device market is facing a stiff competition from SiC semiconductor devices. Popularity of GaN semiconductor devices is expected to increase with the growing application areas of GaN semiconductor devices. Emergence of new technologies and rising application areas are the major drivers of this market. Electric and hybrid electric vehicles pose a huge opportunity area for GaN semiconductor. However, costlier industrial process is the major hindrance for this market. The objective of this report is to find, analyze, and provide growth forecasts for GaN semiconductor devices for various applications such as computer, ICT (Information and Communication Technology), automotive, military, aerospace, defense, consumer electronics and medical among others. This research report provides thorough analysis of the global GaN semiconductor device market based on its product types, applications, and geographies for the period from 2013 to 2019. It provides complete outlook of major drivers, restraints, and opportunities responsible for the popularity and growth of GaN semiconductor devices. In addition, the report covers company profiles of key players in the market, their recent developments and business strategies. Some of the major players profiled in the report are Fujitsu Limited (Japan), GaN Systems Inc (Canada), Freescale Semiconductors Incorporated (U.S.), International Rectifier Corporation (U.S.), and RF Micro Devices Inc. (U.S.) among others. Moreover, the report helps in better understanding of the market with the help of various highlights on the competitive situation across different levels of the value chain and Porter's five forces analysis. In all, the report provides a detailed analysis of the global GaN semiconductor devices market along with the forecast in terms of revenue (USD million) for all the segments from 2013 to 2019. Key Topics Covered: Preface Executive Summary Gallium Nitride (GaN) Semiconductor Devices Market Analysis Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Product 2013 - 2019 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Applications 2013 - 2019 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Geography 2013 - 2019 Company Profiles List of Figures List of Tables Companies Mentioned - Cree Inc. - Efficient Power Conversion Corporation - Freescale Semiconductor Inc. - Fujitsu Limited - GaN Systems Inc. - International Quantum Epitaxy plc - International Rectifier - NXP Semiconductors N.V. - Nichia Corporation - RF Micro Devices Inc. - Renesas Electronics Corporation - Texas Instruments Inc. - Toshiba Corporation For more information visit http://www.researchandmarkets.com/research/bd...iconductor About Research and Markets Research and Markets is the world's leading source for international market research reports and market data. We provide you with the latest data on international and regional markets, key industries, the top companies, new products and the latest trends.
Global Power Discrete Market 2014-2018: with Infineon Technologies AG, Mitsubishi Electric Corp, and Toshiba Corp. Dominating
M2 - Mon Feb 24, 10:54AM CST
Research and Markets (http://www.researchandmarkets.com/research/vgdfkh/global_power) has announced the addition of the "Global Power Discrete Market 2014-2018" report to their offering. The analysts forecast the Global Power Discrete market to grow at a CAGR of 8.43 percent over the period 2013-2018. One of the key factors contributing to this market growth is the high demand for discrete IGBTs. The Global Power Discrete market has also been witnessing the emerging market for SiC and GaN power semiconductors. However, the low demand due to global economic slowdown could pose a challenge to the growth of this market. Key vendors dominating this space are Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corp, STMicroelectronics N.V., and Toshiba Corp. Other vendors mentioned in the report are Fuji Electric Co. Ltd., International Rectifier, ON Semiconductor Corp., Renesas Electronics Corp., and Vishay Intertechnology Inc. Commenting on the report, an analyst from the team said: The emerging market for SiC and GaN power semiconductors is expected to drive the Global Power Discrete market during the forecast period. SiC power semiconductors comprise SiC MOSFET, SiC JFET, SiC BJT, and SiC Schottky diodes. Currently, SiC is widely used in the development of power semiconductors; however, GaN is a wide bandgap material that offers similar performance benefits to SiC but has greater cost-reduction potential, and the market for GaN power semiconductors is expected to grow rapidly in the coming years. In addition, GaN can be made available using existing silicon substrates, which can enable mass production and reduced cost. Power semiconductors using next-generation materials such as SiC and GaN are characterized to have lower energy loss, high-speed switching, and higher heat resistance than conventionally-used silicon. The adoption of SiC and GaN power semiconductors is expected to witness a significant increase, particularly in the EV/HEV and Industrial Motor Drive segments. According to the report, the growth of the Global Power Discrete market is driven by several factors, including the high demand for discrete IGBTs. Discrete IGBTs enable increased efficiency in electronic devices ranging from consumer electronics to several high power electronic applications. They play a major role in the technological advancement of power electronics. For more information visit http://www.researchandmarkets.com/research/vg...obal_power About Research and Markets Research and Markets is the world's leading source for international market research reports and market data. We provide you with the latest data on international and regional markets, key industries, the top companies, new products and the latest trends.
International Rectifier Opens State-of-the-Art Ultra-Thin Wafer Processing Facility in Singapore
Business Wire - Mon Feb 24, 8:04AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today announced that the company has commenced initial production at its new state-of-the-art ultra-thin wafer processing facility in Singapore (IRSG).
International Rectifier to Present Latest Power Management Solutions at APEC 2014
Business Wire - Thu Feb 20, 8:00AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today announced it will showcase the company's latest power management solutions at the Applied Power Electronics Conference and Exposition (APEC) which is being held at Fort Worth Convention Center, Fort Worth, Texas, March 16-20, 2014.
International Rectifier Earnings Hindsight: Down 8.1% in Last 12 Days (IRF)
Comtex SmarTrend(R) - Mon Feb 10, 7:43AM CST
When International Rectifier (NYSE:IRF) reported earnings a week ago on January 29th, 2014, analysts, on average, expected the company to report earnings of $0.18 on sales of $265.7 million. International Rectifier actually reported earnings of $0.19 per share on sales of $270.0 million, beating EPS estimates by $0.01 and beating revenue estimates by $4.3 million. Since the company's report, shares of International Rectifier have fallen from $26.93 to $24.74, representing a loss of 8.1% in the past 12 days.
Fitch Affirms International Rectifier's IDR at 'BB'; Outlook Stable
Business Wire - Tue Feb 04, 3:55PM CST
Fitch Ratings has affirmed International Rectifier Corp.'s (IR) (NYSE: IRF) 'BB' long-term Issuer Default Rating (IDR) and 'BB' rating for the company's $100 million senior unsecured revolving credit facility (RCF) expiring 2016. The Rating Outlook is Stable. The company has no outstanding public debt.
Research and Markets: The Microinverter and DC Optimizer Landscape 2014 Report: The Evolution From Market Niche to Market Success
Business Wire - Tue Feb 04, 3:49AM CST
Research and Markets (http://www.researchandmarkets.com/research/nc8b42/the_microinverter) has announced the addition of the "The Microinverter and DC Optimizer Landscape 2014: The Evolution From Market Niche to Market Success" report to their offering.
IRF Q2 Earnings in Line; Revs Up Y/Y - Analyst Blog
Zacks Equity Research - Zacks Investment Research - Mon Feb 03, 8:20AM CST
International Rectifier Corp. reported second-quarter fiscal 2014 earnings per share of 19 cents per share, in line with the Zacks Consensus Estimate.
Upgrade Alert for International Rectifier (IRF)
Comtex SmarTrend(R) - Fri Jan 31, 7:15AM CST
International Rectifier (NYSE:IRF) was upgraded from Neutral to Buy at Citigroup today. The stock closed yesterday at $25.64 on volume of 1.1 million shares, above average daily volume of 379,000. Over the past year, International Rectifier has traded in a range of $17.62 to $28.19 and closed yesterday at $25.64, 46% above that low. The 200-day and 50-day moving averages have moved 0.59% higher and 0.75% higher over the past week, respectively.
Semiconductor Stock Outlook - Feb 2014 - Zacks Analyst Interviews
Sejuti Banerjea - Zacks Investment Research - Fri Jan 31, 2:01AM CST
Semiconductor Stock Outlook - Feb 2014 - Zacks Analyst Interviews
Semiconductor Stock Outlook - Feb 2014 - Industry Outlook
Sejuti Banerjea - Zacks Investment Research - Fri Jan 31, 2:01AM CST
Semiconductor Stock Outlook - Feb 2014 - Industry Outlook
Uptrend Call Working As International Rectifier Stock Rises 11.7% (IRF)
Comtex SmarTrend(R) - Thu Jan 30, 9:42AM CST
SmarTrend identified an Uptrend for International Rectifier (NYSE:IRF) on July 10th, 2013 at $22.49. In approximately 7 months, International Rectifier has returned 11.74% as of today's recent price of $25.13.
IR's Versatile IRS2983 LEDrivIR(TM) Control IC Simplifies Design and Reduces Part Count for High Performance Dimming Applications
Business Wire - Thu Jan 30, 8:00AM CST
International Rectifier, IR(R) (NYSE:IRF), a world leader in power management technology, today introduced the IRS2983 control IC for single stage Flyback and Buck-Boost topologies used in LED drivers and power supplies.
International Rectifier Reports Second Quarter Fiscal Year 2014 Results
Business Wire - Wed Jan 29, 3:01PM CST
International Rectifier Corporation (NYSE:IRF) today announced financial results for the second quarter (ended December 29, 2013) of its fiscal year 2014. Revenue was $270.0 million, about flat compared to $269.8 million in the prior quarter and a 20.6% increase from $223.8 million in the prior year quarter. GAAP net income for the second quarter was $17.9 million, or $0.25 per fully diluted share compared to GAAP net income of $8.7 million, or $0.12 per fully diluted share, in the prior quarter and GAAP net loss of $32.7 million, or $0.47 per fully diluted share in the prior year quarter.
Sony Releases Upgrade To Sound Forge(TM) Pro Mac And Update To SpectraLayers(TM) Pro Audio Editing Software
PR Newswire - Tue Jan 28, 9:21AM CST
Sony Creative Software, a leading global provider of professional editing and authoring solutions, today released new versions of its Sound Forge(TM) Pro Mac and SpectraLayers(TM) Pro [WIN/MAC] applications. These products can be purchased separately or together in the new Audio Master Suite Mac bundle.
International Rectifier Up 23.2% Since SmarTrend Uptrend Call (IRF)
Comtex SmarTrend(R) - Thu Jan 23, 9:20AM CST
SmarTrend identified an Uptrend for International Rectifier (NYSE:IRF) on July 10th, 2013 at $22.49. In approximately 7 months, International Rectifier has returned 23.21% as of today's recent price of $27.71.
IR's Proven HTH270 and HTM270 High Temperature, High-Voltage DC-DC Converters for Down-hole Tools Reduce Design Time and System Cost
Business Wire - Thu Jan 16, 8:00AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today introduced the HTH27022S and HTM27092S isolated hybrid hermetic DC-DC converters for high temperature and high shock environments such as oil drilling applications and mud turbine generators.
IR's Robust 100V FastIRFET(TM) PQFN 5x6 Power MOSFET Delivers Benchmark Performance for Telecom Power Supply Applications
Business Wire - Thu Mar 06, 8:01AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today announced the introduction of the IRFH7185TRPbF 100V FastIRFET(TM) power MOSFET that delivers benchmark performance for DC-DC power supplies used in telecom applications.
IR to Showcase Latest Energy Saving Power Management Solutions at Electronica China 2014
Business Wire - Tue Mar 04, 8:00AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today announced it will showcase the company's industry-leading energy efficient power management solutions at Electronica China 2014, March 18-20, 2014, Shanghai New International Expo Center (SNIEC), Shanghai.
IR Introduces a Rugged, Reliable Ultra-fast 1400V IGBT Optimized for Induction Heating and Soft Switching Applications
Business Wire - Thu Feb 27, 8:00AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today introduced a rugged, reliable ultra-fast 1400V Trench Insulated Gate Bipolar Transistor (IGBT) optimized for soft switching applications including induction cooktops and microwave ovens.
GaN Semiconductor Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019
M2 - Thu Feb 27, 4:22AM CST
Research and Markets (http://www.researchandmarkets.com/research/bdj8cx/gan_semiconductor) has announced the addition of the "GaN Semiconductor Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019" report to their offering. 'GaN Semiconductor Devices (Power semiconductors, Opto semiconductors) Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast, 2013 - 2019' Gallium Nitride (GaN) is a hard material that contains various chemical properties due to which it finds its suitability for manufacturing of semiconductor devices. Currently GaN semiconductor device market is facing a stiff competition from SiC semiconductor devices. Popularity of GaN semiconductor devices is expected to increase with the growing application areas of GaN semiconductor devices. Emergence of new technologies and rising application areas are the major drivers of this market. Electric and hybrid electric vehicles pose a huge opportunity area for GaN semiconductor. However, costlier industrial process is the major hindrance for this market. The objective of this report is to find, analyze, and provide growth forecasts for GaN semiconductor devices for various applications such as computer, ICT (Information and Communication Technology), automotive, military, aerospace, defense, consumer electronics and medical among others. This research report provides thorough analysis of the global GaN semiconductor device market based on its product types, applications, and geographies for the period from 2013 to 2019. It provides complete outlook of major drivers, restraints, and opportunities responsible for the popularity and growth of GaN semiconductor devices. In addition, the report covers company profiles of key players in the market, their recent developments and business strategies. Some of the major players profiled in the report are Fujitsu Limited (Japan), GaN Systems Inc (Canada), Freescale Semiconductors Incorporated (U.S.), International Rectifier Corporation (U.S.), and RF Micro Devices Inc. (U.S.) among others. Moreover, the report helps in better understanding of the market with the help of various highlights on the competitive situation across different levels of the value chain and Porter's five forces analysis. In all, the report provides a detailed analysis of the global GaN semiconductor devices market along with the forecast in terms of revenue (USD million) for all the segments from 2013 to 2019. Key Topics Covered: Preface Executive Summary Gallium Nitride (GaN) Semiconductor Devices Market Analysis Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Product 2013 - 2019 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Applications 2013 - 2019 Gallium Nitride (GaN) Semiconductor Devices Market Analysis, By Geography 2013 - 2019 Company Profiles List of Figures List of Tables Companies Mentioned - Cree Inc. - Efficient Power Conversion Corporation - Freescale Semiconductor Inc. - Fujitsu Limited - GaN Systems Inc. - International Quantum Epitaxy plc - International Rectifier - NXP Semiconductors N.V. - Nichia Corporation - RF Micro Devices Inc. - Renesas Electronics Corporation - Texas Instruments Inc. - Toshiba Corporation For more information visit http://www.researchandmarkets.com/research/bd...iconductor About Research and Markets Research and Markets is the world's leading source for international market research reports and market data. We provide you with the latest data on international and regional markets, key industries, the top companies, new products and the latest trends.
Global Power Discrete Market 2014-2018: with Infineon Technologies AG, Mitsubishi Electric Corp, and Toshiba Corp. Dominating
M2 - Mon Feb 24, 10:54AM CST
Research and Markets (http://www.researchandmarkets.com/research/vgdfkh/global_power) has announced the addition of the "Global Power Discrete Market 2014-2018" report to their offering. The analysts forecast the Global Power Discrete market to grow at a CAGR of 8.43 percent over the period 2013-2018. One of the key factors contributing to this market growth is the high demand for discrete IGBTs. The Global Power Discrete market has also been witnessing the emerging market for SiC and GaN power semiconductors. However, the low demand due to global economic slowdown could pose a challenge to the growth of this market. Key vendors dominating this space are Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corp, STMicroelectronics N.V., and Toshiba Corp. Other vendors mentioned in the report are Fuji Electric Co. Ltd., International Rectifier, ON Semiconductor Corp., Renesas Electronics Corp., and Vishay Intertechnology Inc. Commenting on the report, an analyst from the team said: The emerging market for SiC and GaN power semiconductors is expected to drive the Global Power Discrete market during the forecast period. SiC power semiconductors comprise SiC MOSFET, SiC JFET, SiC BJT, and SiC Schottky diodes. Currently, SiC is widely used in the development of power semiconductors; however, GaN is a wide bandgap material that offers similar performance benefits to SiC but has greater cost-reduction potential, and the market for GaN power semiconductors is expected to grow rapidly in the coming years. In addition, GaN can be made available using existing silicon substrates, which can enable mass production and reduced cost. Power semiconductors using next-generation materials such as SiC and GaN are characterized to have lower energy loss, high-speed switching, and higher heat resistance than conventionally-used silicon. The adoption of SiC and GaN power semiconductors is expected to witness a significant increase, particularly in the EV/HEV and Industrial Motor Drive segments. According to the report, the growth of the Global Power Discrete market is driven by several factors, including the high demand for discrete IGBTs. Discrete IGBTs enable increased efficiency in electronic devices ranging from consumer electronics to several high power electronic applications. They play a major role in the technological advancement of power electronics. For more information visit http://www.researchandmarkets.com/research/vg...obal_power About Research and Markets Research and Markets is the world's leading source for international market research reports and market data. We provide you with the latest data on international and regional markets, key industries, the top companies, new products and the latest trends.
International Rectifier Opens State-of-the-Art Ultra-Thin Wafer Processing Facility in Singapore
Business Wire - Mon Feb 24, 8:04AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today announced that the company has commenced initial production at its new state-of-the-art ultra-thin wafer processing facility in Singapore (IRSG).
International Rectifier to Present Latest Power Management Solutions at APEC 2014
Business Wire - Thu Feb 20, 8:00AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today announced it will showcase the company's latest power management solutions at the Applied Power Electronics Conference and Exposition (APEC) which is being held at Fort Worth Convention Center, Fort Worth, Texas, March 16-20, 2014.
International Rectifier Earnings Hindsight: Down 8.1% in Last 12 Days (IRF)
Comtex SmarTrend(R) - Mon Feb 10, 7:43AM CST
When International Rectifier (NYSE:IRF) reported earnings a week ago on January 29th, 2014, analysts, on average, expected the company to report earnings of $0.18 on sales of $265.7 million. International Rectifier actually reported earnings of $0.19 per share on sales of $270.0 million, beating EPS estimates by $0.01 and beating revenue estimates by $4.3 million. Since the company's report, shares of International Rectifier have fallen from $26.93 to $24.74, representing a loss of 8.1% in the past 12 days.
Fitch Affirms International Rectifier's IDR at 'BB'; Outlook Stable
Business Wire - Tue Feb 04, 3:55PM CST
Fitch Ratings has affirmed International Rectifier Corp.'s (IR) (NYSE: IRF) 'BB' long-term Issuer Default Rating (IDR) and 'BB' rating for the company's $100 million senior unsecured revolving credit facility (RCF) expiring 2016. The Rating Outlook is Stable. The company has no outstanding public debt.
Research and Markets: The Microinverter and DC Optimizer Landscape 2014 Report: The Evolution From Market Niche to Market Success
Business Wire - Tue Feb 04, 3:49AM CST
Research and Markets (http://www.researchandmarkets.com/research/nc8b42/the_microinverter) has announced the addition of the "The Microinverter and DC Optimizer Landscape 2014: The Evolution From Market Niche to Market Success" report to their offering.
IRF Q2 Earnings in Line; Revs Up Y/Y - Analyst Blog
Zacks Equity Research - Zacks Investment Research - Mon Feb 03, 8:20AM CST
International Rectifier Corp. reported second-quarter fiscal 2014 earnings per share of 19 cents per share, in line with the Zacks Consensus Estimate.
Upgrade Alert for International Rectifier (IRF)
Comtex SmarTrend(R) - Fri Jan 31, 7:15AM CST
International Rectifier (NYSE:IRF) was upgraded from Neutral to Buy at Citigroup today. The stock closed yesterday at $25.64 on volume of 1.1 million shares, above average daily volume of 379,000. Over the past year, International Rectifier has traded in a range of $17.62 to $28.19 and closed yesterday at $25.64, 46% above that low. The 200-day and 50-day moving averages have moved 0.59% higher and 0.75% higher over the past week, respectively.
Semiconductor Stock Outlook - Feb 2014 - Zacks Analyst Interviews
Sejuti Banerjea - Zacks Investment Research - Fri Jan 31, 2:01AM CST
Semiconductor Stock Outlook - Feb 2014 - Zacks Analyst Interviews
Semiconductor Stock Outlook - Feb 2014 - Industry Outlook
Sejuti Banerjea - Zacks Investment Research - Fri Jan 31, 2:01AM CST
Semiconductor Stock Outlook - Feb 2014 - Industry Outlook
Uptrend Call Working As International Rectifier Stock Rises 11.7% (IRF)
Comtex SmarTrend(R) - Thu Jan 30, 9:42AM CST
SmarTrend identified an Uptrend for International Rectifier (NYSE:IRF) on July 10th, 2013 at $22.49. In approximately 7 months, International Rectifier has returned 11.74% as of today's recent price of $25.13.
IR's Versatile IRS2983 LEDrivIR(TM) Control IC Simplifies Design and Reduces Part Count for High Performance Dimming Applications
Business Wire - Thu Jan 30, 8:00AM CST
International Rectifier, IR(R) (NYSE:IRF), a world leader in power management technology, today introduced the IRS2983 control IC for single stage Flyback and Buck-Boost topologies used in LED drivers and power supplies.
International Rectifier Reports Second Quarter Fiscal Year 2014 Results
Business Wire - Wed Jan 29, 3:01PM CST
International Rectifier Corporation (NYSE:IRF) today announced financial results for the second quarter (ended December 29, 2013) of its fiscal year 2014. Revenue was $270.0 million, about flat compared to $269.8 million in the prior quarter and a 20.6% increase from $223.8 million in the prior year quarter. GAAP net income for the second quarter was $17.9 million, or $0.25 per fully diluted share compared to GAAP net income of $8.7 million, or $0.12 per fully diluted share, in the prior quarter and GAAP net loss of $32.7 million, or $0.47 per fully diluted share in the prior year quarter.
Sony Releases Upgrade To Sound Forge(TM) Pro Mac And Update To SpectraLayers(TM) Pro Audio Editing Software
PR Newswire - Tue Jan 28, 9:21AM CST
Sony Creative Software, a leading global provider of professional editing and authoring solutions, today released new versions of its Sound Forge(TM) Pro Mac and SpectraLayers(TM) Pro [WIN/MAC] applications. These products can be purchased separately or together in the new Audio Master Suite Mac bundle.
International Rectifier Up 23.2% Since SmarTrend Uptrend Call (IRF)
Comtex SmarTrend(R) - Thu Jan 23, 9:20AM CST
SmarTrend identified an Uptrend for International Rectifier (NYSE:IRF) on July 10th, 2013 at $22.49. In approximately 7 months, International Rectifier has returned 23.21% as of today's recent price of $27.71.
IR's Proven HTH270 and HTM270 High Temperature, High-Voltage DC-DC Converters for Down-hole Tools Reduce Design Time and System Cost
Business Wire - Thu Jan 16, 8:00AM CST
International Rectifier, IR(R) (NYSE: IRF), a world leader in power management technology, today introduced the HTH27022S and HTM27092S isolated hybrid hermetic DC-DC converters for high temperature and high shock environments such as oil drilling applications and mud turbine generators.
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