NoMIS Power Introduces Innovative 3.3 kV SiC MOSFET Technology
NoMIS Power Corporation, a pioneering force in advanced Silicon Carbide (SiC) power semiconductor technology, announces the release of its latest innovation: the 3.3 kV SiC MOSFET, known as the NoMIS N3PT080MP330. This MOSFET features an impressive on-resistance of just 80 m?, coupled with best-in-class performance stats, making it an ideal upgrade for medium-voltage applications.
Benefits of NoMIS Power's 3.3 kV SiC MOSFET
This new device expands NoMIS Power's established technology into medium-voltage power electronics, enhancing efficiency, reliability, and overall performance for complex power conversion needs. Its remarkable qualities empower customers transitioning from older silicon technologies to harness the cutting-edge advantages of SiC at higher voltages, such as reduced switching losses, increased power density, and superior thermal management.
Key Application Areas
The applications for the NoMIS N3PT080MP330 SiC MOSFET are expansive. Key sectors include battery energy storage systems (BESS), renewable energy converters, electric vehicle charging infrastructure, and motor drives for industrial machinery. These innovations pave the way for modernizing power conversion across various industries.
Future Developments in the 3.3 kV SiC Lineup
NoMIS Power also plans to release additional components to expand the 3.3 kV SiC product lineup later this year. Anticipated additions include a 50 m? (55 A) SiC MOSFET followed by a 25 m? (109 A) SiC MOSFET in the upcoming year. These products are designed to push the boundaries of what is achievable in the medium-voltage domain, providing designers with tailored options.
Innovations in Technology
The NoMIS N3PT080MP330 employs a unique architecture, combining ultra-low specific on-resistance with above-industry-standard gate oxide thickness. This innovative design results in:
- Exceptional Efficiency: It maintains low switching and conduction losses even under high temperature conditions.
- Design Flexibility: Rated performance at +18 V and +20 V enables smooth integration into existing systems without the need for additional components like external diodes.
- Reliability and Ruggedness: The thicker gate oxide not only improves longevity but also enhances overall performance in high-stress environments, making it a robust solution for varying applications.
- Exceptional Figures of Merit: Including low values for both Ron*Coss and Ron*Crss.
Ideal Markets for the New SiC MOSFET
The NoMIS N3PT080MP330 is particularly well-suited for several burgeoning sectors:
- Energy Facilities: Applications include high-power solar inverters and robust battery energy storage systems.
- Transportation: The technology is set to enhance railway and heavy-duty electric vehicles with efficient power management.
- Industrial and Charging Solutions: Targeted towards ultra-fast electric vehicle charging stations and high-performance industrial motor drives.
Proven MOSFET Technology
Building upon its established 1.2 kV planar SiC MOSFET technology, NoMIS Power has ensured that the new 3.3 kV device maintains high process maturity and supply chain readiness. This creates a clear migration path for customers needing higher voltage capabilities without compromising on manufacturability or performance.
Showcase at ICSCRM 2025
NoMIS Power plans to present the N3PT080MP330 SiC MOSFET at the International Conference on Silicon Carbide and Related Materials (ICSCRM 2025) slated for mid-September. Visitors will have opportunities to discuss the device's advantages and explore further customization options.
About NoMIS Power Corporation
NoMIS Power Corporation is a leader in designing and developing innovative Silicon Carbide (SiC) semiconductor devices and customized packaging solutions. With a diverse portfolio that spans voltages from 400 V to 20 kV, the company prides itself on crafting reliable and resilient power solutions aimed at mission-critical applications. Supporting clients with versatile regional supply chains across different continents, NoMIS also provides SiC customization services tailored to meet specific needs of businesses.
Frequently Asked Questions
What is the significance of NoMIS Power's 3.3 kV SiC MOSFET?
The 3.3 kV SiC MOSFET represents a significant technological advancement, offering higher efficiency and reliability for medium-voltage applications.
What applications can benefit from this new MOSFET?
Key applications include battery energy storage systems, renewable energy systems, and electronic vehicle charging stations.
How does the new SiC MOSFET improve on older technologies?
The SiC MOSFET features lower switching losses and increased thermal performance compared to silicon IGBTs.
What future products can we expect from NoMIS?
NoMIS plans to expand the 3.3 kV SiC product line with additional MOSFET options in the coming months.
Where will the N3PT080MP330 be showcased?
The device will be demonstrated at the International Conference on Silicon Carbide and Related Materials (ICSCRM 2025).
