Vishay Intertechnology Launches Innovative Power MOSFET Design
Introducing the Latest MOSFET Innovation by Vishay Intertechnology
Vishay Intertechnology, Inc. (NYSE: VSH) has recently unveiled its new Gen 4.5 650 V E Series power MOSFET, designed to provide enhanced efficiency and power density across a variety of applications including telecom, industrial sectors, and computing technologies.
The new SiHK050N65E model demonstrates remarkable advancements over its predecessors, drastically reducing on-resistance by 48.2%. This improvement results in a significant 65.4% decrease in the resistance times gate charge, a critical figure of merit for 650 V MOSFETs utilized in power conversion scenarios. This innovation is set to reshape the landscape of power electronics.
Applications Addressed by the New MOSFET
Vishay's extensive range of MOSFET technologies caters to every stage of power conversion, ranging from high-voltage inputs to low-voltage outputs necessary for powering state-of-the-art equipment. The SiHK050N65E, along with the other devices in the Gen 4.5 650 V E Series, actively responds to the demand for improved efficiency and power density in key stages of the power system architecture including Power Factor Correction (PFC) and DC/DC converter blocks. Anticipated applications include servers, edge computing systems, and supercomputers, along with UPS systems, HID lamps, fluorescent ballast lighting, and solar inverters.
Enhanced Performance Features
Utilizing Vishay's cutting-edge energy-efficient E Series superjunction technology, the SiHK050N65E showcases a low typical on-resistance of just 0.048 ? at a 10 V gate voltage. This enables higher power ratings suitable for applications exceeding 6 kW. Designed to accommodate inputs from 200 VAC to 277 VAC, this 650 V MOSFET aligns with the Open Compute Project’s Open Rack V3 (ORV3) standards. Additionally, it features an ultra-low gate charge down to 78 nC, culminating in a figure of merit (FOM) of 3.74 ?*nC, which significantly reduces conduction and switching losses, thereby increasing overall efficiency. This enhancement allows the device to meet titanium efficiency benchmarks crucial for server power supplies, reaching up to 96% peak efficiency in real-world settings.
Optimized Switching Performance
For applications demanding improved switching performance in hard-switched topologies, which are prevalent in PFC and two-switch forward converter designs, the newly designed MOSFET offers impressive effective output capacitances of Co(er) and Co(tr) — 167 pF and 1119 pF, respectively. With an industry-low resistance times Co(er) FOM of 8.0 ?*pF, the SiHK050N65E is packaged in a PowerPAK 10 x 12 configuration featuring a Kelvin connection that helps minimize gate noise while boosting dv/dt ruggedness.
The MOSFET is also RoHS-compliant and halogen-free, crafted to endure overvoltage transients in avalanche mode with guarantees confirmed through 100% UIS testing. These attributes position the SiHK050N65E as a reliable choice in demanding applications.
Availability and Contact Information
Samples and production quantities of the SiHK050N65E are currently available. For lead time inquiries, it is recommended to reach out to your local sales office to secure this pivotal component for your next innovative design.
As a leading manufacturer of discrete semiconductors and passive electronic components, Vishay is integral to development within multiple markets including automotive, device manufacturing, telecommunications, and medical technologies. Known for its innovation, Vishay Intertechnology, Inc. continues to contribute to shaping the future of technology. Interested parties can visit www.Vishay.com for more resources and information.
Frequently Asked Questions
What is the significance of the SiHK050N65E's low on-resistance?
The low on-resistance allows for reduced energy losses, which enhances the overall efficiency of power conversion applications, making it ideal for high-efficiency systems.
Which applications can benefit from this MOSFET?
This MOSFET is applicable in a range of fields including power supplies for servers, renewable energy systems, industrial equipment, and high-tech lighting solutions.
How does the SiHK050N65E compare to its predecessors?
The SiHK050N65E offers substantial improvements in on-resistance and gate charge metrics, leading to enhanced efficiency and reliability in high-power applications.
What are the implications of its compliance with RoHS and halogen-free standards?
This compliance ensures that the device meets stringent environmental standards, making it suitable for use in markets that prioritize sustainability and safety in electronic components.
Can I obtain samples of the SiHK050N65E?
Yes, samples and production quantities are available now through local sales offices to facilitate testing and integration into designs.
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