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Posted On: 01/07/2017 10:02:03 AM
Post# of 22463
Rapid laser-induced photochemical conversion of sol-gel precursors to In2O3 layers and their application in thin-film transistors
S. Dellis, I. Isakov, N. Kalfagiannis, K. Tetzner, T. D. Anthopoulos, D. C. Koutsogeorgis
(Submitted on 3 Jan 2017)
We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In2O3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm2/Vs. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol-gel layer eliminates additional process steps associated with semiconductor patterning and hence significantly reduces fabrication complexity and cost. Our work demonstrates unambiguously that laser-induced photochemical conversion of sol-gel metal oxide precursors can be rapid and compatible with large-area electronics manufacturing.
https://arxiv.org/abs/1701.00859
S. Dellis, I. Isakov, N. Kalfagiannis, K. Tetzner, T. D. Anthopoulos, D. C. Koutsogeorgis
(Submitted on 3 Jan 2017)
We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In2O3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm2/Vs. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol-gel layer eliminates additional process steps associated with semiconductor patterning and hence significantly reduces fabrication complexity and cost. Our work demonstrates unambiguously that laser-induced photochemical conversion of sol-gel metal oxide precursors can be rapid and compatible with large-area electronics manufacturing.
https://arxiv.org/abs/1701.00859
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