there are many challenges in manufacturing process for Quantum Dots Today . The research and understanding fundamental principle's
irrespective of the doping of the material studied, several base line studies have carried forward to today's research. The following is a key.

Further development for high-temperature
operation will require an understanding of the effects of
temperature on the intraband absorption characteristics. In
fact, a better understanding of the effects of temperature on
both the interband and intraband emission and absorption
characteristics of the dots would be helpful in the design of
future room-temperature devices. Several workers have
reported the effects of temperature on interband emission
from InAs/GaAs, (In, Ga)As/GaAs, and (Al, In)As/(Al, -
Ga)As quantum-dot structures.7–9) It has been found that in
some cases, the emission intensity from the nanostructures is
quenched as the temperature is raised.

http://www.mseg.udel.edu/images/projects/Stol...ap_482.pdf

Regards

Sunny:> ))