Posted On: 08/03/2015 4:43:03 PM
Post# of 22465
.....a few snippets from that:
As with other NC-LED structures,154–156 a film of ZnO NCs was used as an electron injection layer, and it was found that NC-LED
performance was very sensitive to the NC emitting layer thickness. With further optimization,
the performance of CdSe/CdS QD LEDs is now comparable to the state-of-the-art OLEDs, with an EQE of 20.5% and
a lifetime of over 100[thin space (1/6-em)]000 hours at 100 cd m−2.142
with a PCE of 8.5% for CZTSSe NCs177 and 7.2% for CIS/ZnS QDs.37Fig. 6 compares record PCEs for QD-PVs with both solution-processed
competitors and established thin film and bulk semiconductor PVs, all in single-junction mode.
sustainable materials such as CZT(S, Se) and CIS are already well-positioned.
Furthermore, the rising QE of InP/ZnS QDs (now as high as 90% for red emission118) also places this ‘green’ material among the best NCs for this metric
More recently, a new strategy to eliminate blinking completely has been demonstrated by encapsulating CdSe/CdS core–shell NCs in silica shells, which are in turn coated with thin gold layers, as illustrated in Fig. 13.249
the synthesis of high-PL InP QDs62 with a spectral coverage that rivals CdSe, and converging performance indicates that these materials are accessible via traditional means
amplified spontaneous emission (ASE) and lasing have been accomplished for red, green and blue wavelengths with upconverting core–shell NaYF4:Yb/Er@NaYF4 NCs.280 Due to the demanding conditions required to achieve population inversion for ASE and lasing, this work clearly demonstrates the substantial potential of this material class in advanced photonic applications
As with other NC-LED structures,154–156 a film of ZnO NCs was used as an electron injection layer, and it was found that NC-LED
performance was very sensitive to the NC emitting layer thickness. With further optimization,
the performance of CdSe/CdS QD LEDs is now comparable to the state-of-the-art OLEDs, with an EQE of 20.5% and
a lifetime of over 100[thin space (1/6-em)]000 hours at 100 cd m−2.142
with a PCE of 8.5% for CZTSSe NCs177 and 7.2% for CIS/ZnS QDs.37Fig. 6 compares record PCEs for QD-PVs with both solution-processed
competitors and established thin film and bulk semiconductor PVs, all in single-junction mode.
sustainable materials such as CZT(S, Se) and CIS are already well-positioned.
Furthermore, the rising QE of InP/ZnS QDs (now as high as 90% for red emission118) also places this ‘green’ material among the best NCs for this metric
More recently, a new strategy to eliminate blinking completely has been demonstrated by encapsulating CdSe/CdS core–shell NCs in silica shells, which are in turn coated with thin gold layers, as illustrated in Fig. 13.249
the synthesis of high-PL InP QDs62 with a spectral coverage that rivals CdSe, and converging performance indicates that these materials are accessible via traditional means
amplified spontaneous emission (ASE) and lasing have been accomplished for red, green and blue wavelengths with upconverting core–shell NaYF4:Yb/Er@NaYF4 NCs.280 Due to the demanding conditions required to achieve population inversion for ASE and lasing, this work clearly demonstrates the substantial potential of this material class in advanced photonic applications
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