Posted On: 12/06/2014 11:12:04 AM
Post# of 22467
Deposition by liquid epitaxy and study of the properties of nano-heteroepitaxial structures with quantum dots for high efficient solar cells
The paper presents experimental results showing the possibility of liquid-phase epitaxy with a pulse-cooled substrate nano-heteroepitaxial structures with Ge quantum dots and GaP matrix for production of single-junction solar cells working under sun light concentration. The preparation of the surface of Si wafers suitable for growing of these structures is described. The optimal technological conditions for growing of the of GaP buffer layer on the Si wafer from supersaturated solutions of melts Sn are applied. Structures with Ge quantum dots are grown at different conditions and study of their structural and optical properties is performed. The surface morphology of the grown materials is studied by AFM microscopy. The photoluminescence spectra of nano-heteroepitaxial structures with Ge quantum dots are presented and analyzed
http://iopscience.iop.org/1742-6596/558/1/012...hPage=true
The paper presents experimental results showing the possibility of liquid-phase epitaxy with a pulse-cooled substrate nano-heteroepitaxial structures with Ge quantum dots and GaP matrix for production of single-junction solar cells working under sun light concentration. The preparation of the surface of Si wafers suitable for growing of these structures is described. The optimal technological conditions for growing of the of GaP buffer layer on the Si wafer from supersaturated solutions of melts Sn are applied. Structures with Ge quantum dots are grown at different conditions and study of their structural and optical properties is performed. The surface morphology of the grown materials is studied by AFM microscopy. The photoluminescence spectra of nano-heteroepitaxial structures with Ge quantum dots are presented and analyzed
http://iopscience.iop.org/1742-6596/558/1/012...hPage=true
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