1. (WO2013126434) WIDE ANGLE THREE-DIMENSIONAL

Posted On: 11/30/2013 1:05:03 PM

Post# of 101

Posted By: Jerseyfish

1. (WO2013126434) WIDE ANGLE THREE-DIMENSIONAL SOLAR CELLS

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Pub. No.:		WO/2013/126434		International Application No.:		PCT/US2013/026914
Publication Date:		29.08.2013		International Filing Date:		20.02.2013

IPC:

H01L 31/042 (2006.01), H01L 31/0236 (2006.01)

Applicants:

SOLAR3D , INC. [US/US]; 6500 Hollister Ave., Suite 130 Santa Barbara, CA 93117 (US).
DAGLI, Mehmet, Nadir [US/US]; (US).
SON, Changwan [US/US]; (US)

Inventors:

DAGLI, Mehmet, Nadir ; (US).
SON, Changwan ; (US)

Agent:

LEE, Adrian, J. ; Workman Nydegger 60 East South Temple, Suite 1000 Salt Lake City, UT 84111 (US)

Priority Data:

61/601,796		22.02.2012		US
61/671,612		13.07.2012		US

Title

(EN) WIDE ANGLE THREE-DIMENSIONAL SOLAR CELLS
(FR) CELLULES SOLAIRES TRIDIMENSIONNELLES GRAND ANGLE

Abstract:

(EN) A three dimensional solar cell composed of a semiconductor body that has a substantially flat bottom surface, and shaped trenches formed in an arrayed manner along its top side. Thus, multiple pillars are thereby formed in the semiconductor body extending toward the top side of the semiconductor body. A light collecting material fills the shaped trenches along the top side of the semiconductor body and forms a substantially flat light receiving top surface parallel to the bottom surface of the semiconductor body. Each of at least some of the trenches are structured such that there exists at least one point on the substantially flat light receiving surface that if a light ray is incident on that point, the light ray, if remaining within the corresponding trench, as opposed to entering the semiconductor body, will be redirected upwards at least after a fourth reflection on neighboring pillars.
(FR) L'invention concerne une cellule solaire tridimensionnelle composée d'un corps en semiconducteur qui présente une surface inférieure sensiblement plate et des tranchées profilées formées de manière à constituer un réseau le long de sa face supérieure. Des piliers multiples sont ainsi formés dans le corps en semiconducteur, s'étendant en direction de la face supérieure du corps en semiconducteur. Un matériau recueillant la lumière remplit les tranchées profilées le long de la face supérieure du corps en semiconducteur et forme une surface supérieure sensiblement plate recevant la lumière, parallèle à la surface inférieure du corps en semiconducteur. Chaque tranchée d'au moins une partie des tranchées est structurée de telle façon qu'il existe au moins un point sur la surface sensiblement plate recevant la lumière caractérisé en ce que, si un rayon de lumière est incident sur ledit point, le rayon de lumière, s'il reste à l'intérieur de la tranchée correspondante, c'est-à-dire ne pénètre pas dans le corps en semiconducteur, est redirigé vers le haut au moins après une quatrième réflexion sur des piliers voisins.

Designated States:

AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Org. (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (EAPO) (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).

Publication Language:	English (EN)
Filing Language:	English (EN)

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