Enhancements in ROHM's SiC Schottky Barrier Diodes for xEV

Innovative SiC Schottky Barrier Diodes by ROHM

ROHM Semiconductor has made a significant leap in semiconductor technology by introducing new surface mount silicon carbide (SiC) Schottky barrier diodes (SBDs). These advancements aim at enhancing insulation resistance by optimizing the creepage distance between terminals, an essential feature for high-voltage applications. The introduction of these eight new models, specifically designed for automotive applications like onboard chargers (OBCs), sets the stage for a series of additional products aimed at industrial equipment in the near future.

The Rise of SiC Technology in xEV Applications

As the electric vehicle (xEV) market continues to gain momentum, the demand for efficient power semiconductors is ever-increasing. SiC SBDs are particularly favored for their ability to minimize heat generation while providing high-speed switching capabilities. Manufacturers are quickly adopting compact surface mount devices (SMDs) that support automated assembly, significantly improving production efficiency. However, the challenge lies in developing high-voltage designs that ensure adequate creepage distance, crucial for preventing electric tracking.

ROHM's Strategic Design Improvements

ROHM has positioned itself as a leader in SiC technology by developing these SBDs to meet high-performance standards. By utilizing a unique package design that expands the creepage distance to a minimum of 5.1mm—about 1.3 times that of standard products—ROHM significantly boosts insulation capability. This innovative design also eliminates the previous center pin configuration, allowing devices to be easily integrated into existing circuit layouts without additional insulation treatments, further simplifying installation in high-voltage applications.

Versatile Voltage Ratings for Diverse Applications

The newly released diodes come in two voltage ratings, 650V and 1200V, making them suitable for the commonly used 400V systems in xEVs, as well as higher voltage systems that are anticipated to be adopted in the future. The AEC-Q101 qualified models meet rigorous automotive-grade reliability standards, ensuring they can withstand the demanding environments found in modern vehicles.

Expanding ROHM's Product Lineup

In response to the growing needs in automotive and industrial sectors, ROHM is committed to continually enhancing their range of high-voltage SBDs. The company places a strong emphasis on energy efficiency and reduced power consumption, as these factors are becoming increasingly critical in both the automotive and industrial device landscapes. With this product expansion, ROHM aims to provide optimal semiconductor devices tailored to evolving market requirements.

Applications Where SiC SBDs Shine

ROHM's SiC Schottky barrier diodes are highly suitable for a range of applications. In the automotive sector, they are ideal for use in onboard chargers and DC-DC converters, where efficiency and reliability are of utmost importance. Moreover, in industrial settings, these diodes can be deployed in various devices such as AC servo motors, PV inverters, and uninterruptible power supplies (UPS), showcasing the versatility of these components.

Sales Information and Future Availability

The current lineup of SCS2xxxNHR devices is available for purchase, while models aimed at industrial applications are set to launch in the coming months. Priced at $10.50 per unit for samples, these devices are readily accessible through key online distributors known for high-quality electronic components. As ROHM continues to expand its product offerings, customers can expect more devices to become available through various retail channels.

Understanding the Significance of SiC Technology

Silicon carbide (SiC) represents a crucial advancement in semiconductor technology. By harnessing the superior properties of SiC, ROHM has established a robust foundation for improving the performance and reliability of power electronic devices. The EcoSiC brand embodies this commitment, utilizing unique production processes to ensure excellence from wafer fabrication to final packaging.

Frequently Asked Questions

What are SiC Schottky barrier diodes?

SiC Schottky barrier diodes are semiconductor devices made from silicon carbide, known for their efficiency in high-voltage applications and lower heat generation compared to conventional diodes.

What is the importance of creepage distance in semiconductors?

Creepage distance refers to the minimum distance between conductive elements on a component's surface. It's crucial for ensuring electrical insulation and preventing tracking, which can lead to device failures.

How does ROHM's new product lineup benefit automotive applications?

ROHM’s new diodes enhance efficiency, reliability, and thermal performance, making them highly suitable for automotive systems such as onboard chargers and DC-DC converters.

What distinguishes ROHM's SiC diodes from traditional silicon diodes?

ROHM's SiC diodes offer higher efficiency, improved switching speed, and greater thermal conductivity than conventional silicon diodes, enabling better performance in demanding applications.

Where can I purchase ROHM's SiC Schottky barrier diodes?

These diodes are available through various electronic component distributors, including DigiKey™, Mouser™, and Farnell™, with more retailers expected to offer these products soon.

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