Atomera Collaborates with CINT to Tackle GaN Challenges
Atomera Incorporated (NASDAQ: ATOM), a prominent player in semiconductor materials and technology licensing, has embarked on an exciting project at the Center for Integrated Nanotechnologies (CINT) at Sandia National Laboratories. This initiative focuses on addressing the complex challenges involved in growing Gallium Nitride (GaN) films on Silicon (Si).
Innovating GaN Transistor Development
This user project aims to pioneer the world's first GaN transistors through innovative techniques that employ Atomera’s Mears Silicon Technology™ (MST). The primary objective is to test data derived from wafers that utilize this cutting-edge technology. Early indications point to significant improvements at the materials level when using GaN in conjunction with MST on Silicon wafers.
Benefits of the Project
According to Jeffrey Nelson, the director of CINT, "Atomera’s MST is a remarkable opportunity to advance GaN on Si manufacturing, providing speed, efficiency, and cost savings across various industries, from electronics to microwave technology and even MicroLEDs." The project will leverage the cutting-edge tools and technologies at CINT, along with access to expert scientists and researchers.
Overcoming Manufacturing Limitations
Traditionally, due to limited availability and the size constraints of native substrates, most GaN devices have been developed heteroepitaxially on materials such as sapphire, silicon carbide, or Si substrates. While notable performance has been achieved with these substrates, only silicon substrates exhibit a workable path to larger wafer sizes, reduced costs, and compatibility with well-established CMOS wafer fabrication lines.
Challenges of GaN on Silicon
However, challenges remain, notably with thick GaN films on Si (GaN/Si), where issues such as wafer warping and cracking become pronounced, especially in larger sizes. As Shawn Thomas, vice president of Marketing & Business Development at Atomera, explains, "During the past 25 years, GaN has revolutionized various sectors such as lighting and power electronics; however, manufacturing constraints have limited its integration into modern power electronics." This collaboration with Sandia Labs aims to fabricate devices effectively and gather pivotal data to ascertain the mechanical and electrical advantages of MST-boosted GaN on Si.
Addressing Mechanical Stress in Manufacturing
Managing stress effectively remains the cornerstone of successful thick GaN formulation on Si. Presently, commercially available GaN on Si power electronics are restricted to a rating of approximately 650V. This limitation arises from the maximum achievable epitaxial thickness (and thus the breakdown voltage) on Si, without introducing excessive wafer curvature, micro-cracking, or diminished yield.
Future Prospects with MST
The Mears Silicon Technology has the potential to enhance the growth of GaN epitaxy on Si substrates, especially by alleviating biaxial tensile stress. As a result, it could open new pathways for device manufacturing and empower a broader embrace of GaN technology across various applications.
For individuals keen on understanding more about MST and Atomera’s innovative offerings, visiting their official site provides an insightful look into their endeavors.
About Atomera Incorporated
Atomera Incorporated is dedicated to semiconductor materials and technology licensing, focusing on implementing proprietary, silicon-proven technology within the semiconductor landscape. The company has innovated the Mears Silicon Technology™ (MST®), which not only enhances performance but also improves power efficiency in semiconductor transistors. MST can seamlessly integrate with existing semiconductor manufacturing equipment, complementing other nanoscale technologies present in the industry roadmap.
Frequently Asked Questions
What is the primary goal of Atomera's project with CINT?
The main objective is to address the challenges in growing Gallium Nitride (GaN) films on Silicon substrates, ultimately creating the world’s first GaN transistors.
What technology is being utilized in this project?
Atomera is employing its Mears Silicon Technology™ (MST) to enhance GaN on Si manufacturing.
Why is Silicon a preferred substrate for GaN growth?
Silicon substrates allow for larger wafer sizes, lower costs, and compatibility with established CMOS fabrication technologies.
What challenges do thick GaN films face on Silicon?
Key challenges include wafer warping, cracking, and limitations in achieving higher voltage ratings.
How does MST improve GaN manufacturing?
MST alleviates biaxial tensile stress during the growth of GaN, facilitating better overall yield and performance in power electronics.
